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IXFH40N30Q
IXFT40N30Q
Symbol Test Conditions
(T J = 25 ° C Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
TO-268 Outline
g fs
C iss
C oss
C rss
V DS = 10V, I D = 0.5 ? I D25 , Note 1
V GS = 0V, V DS = 25V, f = 1MHz
20
27
3560
640
170
S
pF
pF
pF
t d(on)
t r
t d(off)
t f
Q g(on)
Q gs
Q gd
Resistive Switching Times
V GS = 10V, V DS = 0.5 ? V DSS , I D = 0.5 ? I D25
R G = 1.5 Ω (External)
V GS = 10V, V DS = 0.5 ? V DSS , I D = 0.5 ? I D25
20
35
40
12
92
22
38
140
35
70
ns
ns
ns
ns
nC
nC
nC
Terminals: 1 - Gate
3 - Source
2 - Drain
4 - Drain
R thJC
0.42 ° C/W
R thCS
Source-Drain Diode
0.25
° C/W
Symbol Test Conditions
(T J = 25 ° C Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
I S
V GS = 0V
40
A
I SM
V SD
Repetitive, Pulse Width Limited by T JM
I F = I S , V GS = 0V, Note 1
160
1.5
A
V
TO-247 Outline
t rr
I RM
Q RM
I F = 40A, -di/dt = 100A/ μ s
V R = 100V, V GS = 0V
8.00
0.85
250
ns
A
μ C
1
2
3
?P
Note
1. Pulse test, t ≤ 300 μ s, duty cycle, d ≤ 2%.
e
Terminals: 1 - Gate
3 - Source
2 - Drain
Dim.
Millimeter
Inches
Min. Max.
A 4.7 5.3
Min. Max.
.185 .209
A 1
A 2
2.2 2.54
2.2 2.6
.087 .102
.059 .098
b 1.0 1.4
.040 .055
b 1
b 2
1.65 2.13
2.87 3.12
.065 .084
.113 .123
C .4 .8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1 4.50
? P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
S 6.15 BSC
242 BSC
IXYS MOSFETs and IGBTs are covered
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344 6,727,585 7,005,734 B2
7,157,338B2
by one or more of the following U.S. patents: 4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405 B2 6,759,692 7,063,975 B2
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
6,771,478 B2 7,071,537
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